Interface Engineering of 2D Materials for Highly Performing Electronic and Energy Devices-Reference-Cited by-同舟云学术

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Interface Engineering of 2D Materials for Highly Performing Electronic and Energy Devices

Published:2024-07-08 Issue:7 Volume:6 Page:4843-4854
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hwang Geunwoo¹,Lee Seungyeon¹,Lee Subin¹,Cho Suyeon¹^ORCID,Yang Heejun²^ORCID

Affiliation:

1. Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea

2. Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

Funder

Samsung

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00562

Reference70 articles.

1. Electric-field-tuned topological phase transition in ultrathin Na3Bi

2. An ultrafast symmetry switch in a Weyl semimetal

3. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

4. Recent Advances in 2D Superconductors

5. 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

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