Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium-Reference-Cited by-同舟云学术

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Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium

Published:2023-11-01 Issue:22 Volume:23 Page:10274-10281
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Xie Hang¹^ORCID,Zhang Nan¹²,Ma Yuteng¹³,Chen Xin¹^ORCID,Ke Lin²,Wu Yihong¹³

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore

2. Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 138634, Singapore

3. National University of Singapore (Chong Qing) Research Institute, Chongqing Liang Jiang New Area, Chongqing 401123, China

Funder

Advanced Research and Technology Innovation Centre, College of Design and Engineering, National University of Singapore

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c02797

Reference57 articles.

1. Current-induced spin orientation of electrons in semiconductors

2. Spin Hall Effect

3. Spin Hall Effect in the Presence of Spin Diffusion

4. Spin Hall effects

5. Orbitronics: The Intrinsic Orbital Current inp-Doped Silicon

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1. Valley-contrasting transport of the coupling between spin and orbital angular momentum in ferromagnetic transition metal dichalcogenides;Physical Review B;2024-08-14

2. Thermal contribution to current-driven antiferromagnetic-order switching;APL Materials;2024-08-01

3. Enhanced torque efficiency in ferromagnetic multilayers by introducing naturally oxidized Cu;Applied Physics Letters;2024-05-06

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