Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory-Reference-Cited by-同舟云学术

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Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory

Published:2014-08-25 Issue:9 Volume:8 Page:9457-9462
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Huang Yu-Ting¹,Huang Chun-Wei¹,Chen Jui-Yuan¹,Ting Yi-Hsin¹,Lu Kuo-Chang²,Chueh Yu-Lun³,Wu Wen-Wei¹

Affiliation:

1. Department of Materials Science and Engineering, National Chiao Tung University, No. 1001, University Road, Hsinchu 300, Taiwan

2. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan

3. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn503576x

Reference37 articles.

1. Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation

2. Thermally efficient and highly scalable In2Se3 nanowire phase change memory

3. Indium selenide (In2Se3) thin film for phase-change memory

4. Electronically Driven Amorphization in Phase-Change In2Se3 Nanowires

5. Crystalline–Crystalline Phase Transformation in Two-Dimensional In2Se3 Thin Layers

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3. Melting-free integrated photonic memory with layered polymorphs;Nanophotonics;2024-01-31

4. Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films;Materials Research Express;2023-10-01

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