Thermally efficient and highly scalable In2Se3 nanowire phase change memory
Author:
Funder
Korean Ministry of Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4802672
Reference40 articles.
1. Phase change materials and their application to random access memory technology
2. Two generations of phase-change memory devices: Differences and common problems
3. Switching and programming dynamics in phase-change memory cells
4. One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)
5. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory
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