High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites-Reference-Cited by-同舟云学术

High-Mobility and Bias-Stable Field-Effect Transistors Based on Lead-Free Formamidinium Tin Iodide Perovskites

Published:2023-10-02 Issue:10 Volume:8 Page:4496-4505
ISSN:2380-8195
Container-title:ACS Energy Letters
language:en
Short-container-title:ACS Energy Lett.

Author:

Zhou Zhiwen¹,Li Qihua²,Chen Mojun³^ORCID,Zheng Xuerong¹,Wu Xiao⁴,Lu Xinhui⁴^ORCID,Tao Shuxia²^ORCID,Zhao Ni¹^ORCID

Affiliation:

1. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China

2. Materials Simulation & Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

3. Smart Manufacturing Thrust, Systems Hub, The Hong Kong University of Science and Technology, Guangzhou 511458, China

4. Department of Physics, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China

Funder

Research Grants Council, University Grants Committee

China Scholarship Council

National Natural Science Foundation of China

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment,Chemistry (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsenergylett.3c01400

Reference46 articles.

1. Two-Dimensional Organic Tin Halide Perovskites with Tunable Visible Emission and Their Use in Light-Emitting Devices

2. Toxicity of organometal halide perovskite solar cells

3. Charge-Carrier Mobilities in Metal Halide Perovskites: Fundamental Mechanisms and Limits

4. Negligible Ion Migration in Tin‐Based and Tin‐Doped Perovskites

5. Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors

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