High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering

Author:

Yang Xiaomin12,Liu Yu12,Yang Shuzhang12,Wu Yanqiu12,Lei Yusheng2,Yang Yingguo34,Liu Ao5,Chu Junhao12,Li Wenwu12ORCID

Affiliation:

1. State Key Laboratory of Photovoltaic Science and Technology Department of Materials Science Fudan University Shanghai 200433 China

2. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai 200433 China

3. School of Microelectronics Fudan University Shanghai 200433 China

4. Shanghai Synchrotron Radiation Facility (SSRF) Zhangjiang Lab Shanghai Advanced Research Institute Shanghai Institute of Applied Physics Chinese Academy of Sciences Shanghai 201204 China

5. Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 611731 China

Abstract

AbstractMetal‐halide perovskite semiconductors have garnered great attention in optoelectronic devices due to their remarkable properties and processing capabilities. Among them, tin (Sn2+) perovskites stand out as promising candidates for use as channel layers in high‐performance p‐channel thin‐film transistors (TFTs) owing to their excellent hole transport property. In this study, a multi A‐cation approach is applied to pure Sn2+ perovskite, incorporating a small amount (7 mol%) of bulky PEA+ cation. This addition greatly improved the crystallinity and orientation of 3D FA0.9Cs0.1SnI3 perovskite, leading to optimized p‐channel Sn2+‐perovskite TFT with a hole mobility of ≈18 cm2 V−1 s−1, a high on/off current ratio of 108, and a small subthreshold swing of 0.5 V dec−1. These TFTs also exhibit a low contact resistance of 87 Ω·cm, attributed to the improved electrode/perovskite channel interface. Furthermore, the TFTs are utilized as an electrical characterization platform to study the charge transport properties and interfacial defects using the low‐frequency noise method, providing insights into the interface properties of perovskite electronic devices.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai Municipality

China Postdoctoral Science Foundation

Publisher

Wiley

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