Doping of Copper(I) Thiocyanate (CuSCN) with Metal Chlorides for p-Channel Thin-Film Transistors-Reference-Cited by-同舟云学术

Doping of Copper(I) Thiocyanate (CuSCN) with Metal Chlorides for p-Channel Thin-Film Transistors

Published:2024-08-20 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Waiprasoet Saran¹^ORCID,Kidkhunthod Pinit²,Nakajima Hideki²^ORCID,Ittisanronnachai Somlak³,Prayongkul Pongkamon¹,Chattakoonpaisarn Chitsanucha¹,Songkerdthong Jetnipat¹,Sukpoonprom Patipan¹,Sudyoadsuk Taweesak³,Promarak Vinich¹^ORCID,Pattanasattayavong Pichaya¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailand

2. Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang, Nakhon Ratchasima 30000, Thailand

3. Frontier Research Center (FRC), Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailand

Funder

Vidyasirimedhi Institute of Science and Technology

National Research Council of Thailand

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01223

Reference70 articles.

1. Self-powered and broadband CuSCN/Si heterojunction photodetector for multi-color imaging based on diffuse reflection mode

2. Semitransparent organic photovoltaics enabled by transparent p-type inorganic semiconductor and near-infrared acceptor

3. Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

4. A Low‐Power CuSCN Hydrogen Sensor Operating Reversibly at Room Temperature

5. Electronic and Defect Structures of CuSCN