Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy-Reference-Cited by-同舟云学术

Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy

Published:2018-01-30 Issue:2 Volume:3 Page:476-481
ISSN:2380-8195
Container-title:ACS Energy Letters
language:en
Short-container-title:ACS Energy Lett.

Author:

Bose Riya¹^ORCID,Adhikari Aniruddha¹^ORCID,Burlakov Victor M.²,Liu Guangyu³,Haque Md Azimul⁴,Priante Davide³,Hedhili Mohamed N.⁵,Wehbe Nimer⁵,Zhao Chao³^ORCID,Yang Haoze¹,Ng Tien Khee³,Goriely Alain²,Bakr Osman M.¹^ORCID,Wu Tom⁴^ORCID,Ooi Boon S.³,Mohammed Omar F.¹^ORCID

Affiliation:

1. KAUST Solar Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia

2. Mathematical Institute, University of Oxford, Woodstock Road, Oxford OX2 6GG, United Kingdom

3. Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia

4. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia

5. Imaging and Characterization Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment,Chemistry (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsenergylett.7b01330

Reference49 articles.

1. 4D Scanning Ultrafast Electron Microscopy: Visualization of Materials Surface Dynamics

2. Direct Femtosecond Observation of Charge Carrier Recombination in Ternary Semiconductor Nanocrystals: The Effect of Composition and Shelling

3. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

4. Four-Dimensional Ultrafast Electron Microscopy: Insights into an Emerging Technique

5. Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy

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