Stacking Faults and Topological Properties in MnBi2Te4: Reconciling Gapped and Gapless States
Author:
Affiliation:
1. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
Funder
Basic Energy Sciences
National Energy Research Scientific Computing Center
Computational Materials Sciences Program and Center for Predictive Simulation of Functional Materials
National Quantum Information Science Research Centers, and Quantum Science Center
Oak Ridge Leadership Computing Facility
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c01939
Reference48 articles.
1. Prediction and observation of an antiferromagnetic topological insulator
2. Antiferromagnetic topological insulators
3. Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi 2 Te 4
4. Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films
5. Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
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