Affiliation:
1. State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, China.
2. Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
3. Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, and Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, Hefei, Anhui 230026, China.
4. SixCarbon Technology, Youmagang Industry Park, Shenzhen 518106, China.
Abstract
Quantum anomalous Hall goes intrinsic
Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi
2
Se
3
doped with magnetic atoms. The doping, however, introduces inhomogeneity, reducing the temperature at which the effect occurs. Two groups have now observed quantum anomalous Hall effect in intrinsically magnetic materials (see the Perspective by Wakefield and Checkelsky). Serlin
et al.
did so in twisted bilayer graphene aligned to hexagonal boron nitride, where the effect enabled the switching of magnetization with tiny currents. In a complementary work, Deng
et al.
observed quantum anomalous Hall effect in the antiferromagnetic layered topological insulator MnBi
2
Te
4
.
Science
, this issue p.
900
, p.
895
; see also p.
848
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
National Science Foundation of China
National Key Research Program of China
National key R and D program of China
Strategic Priority Research Program of the Chinese Academy of Sciences
Strategic Priority Research Program of Chinese Academy of Sciences
Shanghai Municipal Science and Technology Commission
National Science Foundation of Shanghai
the Key Research Program of Frontier Sciences, CAS
Key Research Program of Frontier Sciences, CAS
Publisher
American Association for the Advancement of Science (AAAS)
Cited by
880 articles.
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