Surface Transfer Doping in MoO<sub>3–<i>x</i></sub>/Hydrogenated Diamond Heterostructure-Reference-Cited by-同舟云学术

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Surface Transfer Doping in MoO_3–x/Hydrogenated Diamond Heterostructure

Published:2024-02-01 Issue:6 Volume:15 Page:1579-1583
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Yang Liqiu¹,Nomura Ken-ichi¹,Krishnamoorthy Aravind²^ORCID,Linker Thomas³^ORCID,Kalia Rajiv K.¹,Nakano Aiichiro¹^ORCID,Vashishta Priya¹^ORCID

Affiliation:

1. Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States

2. Department of Mechanical Engineering, Texas A&M University, College Station, Texas 77843, United States

3. Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c03541

Reference39 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Diamond-based RF power transistors: Fundamentals and applications

3. Surface transfer doping of diamond

4. Progress Toward Diamond Power Field-Effect Transistors

5. MoO3 induces p-type surface conductivity by surface transfer doping in diamond

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