Defect Compensation in Nitrogen-Doped β-Ga<sub>2</sub>O<sub>3</sub> Nanowires: Implications for Bipolar Nanoscale Devices-Reference-Cited by-同舟云学术

Defect Compensation in Nitrogen-Doped β-Ga₂O₃ Nanowires: Implications for Bipolar Nanoscale Devices

Published:2022-04-28 Issue:9 Volume:5 Page:12087-12094
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Yamamura Karin¹,Zhu Liangchen¹,Irvine Curtis P.¹,Scott John A.¹,Singh Mandeep²,Jallandhra Anirudh²,Bansal Vipul²^ORCID,Phillips Matthew R.¹,Ton-That Cuong¹^ORCID

Affiliation:

1. School of Mathematical and Physical Sciences, University of Technology Sydney, P.O. Box 123, Broadway, New South Wales 2007, Australia

2. Ian Potter NanoBioSensing Facility, NanoBiotechnology Research Laboratory, School of Science, RMIT University, Melbourne, Victoria 3001, Australia

Funder

Australian Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c00599

Reference42 articles.

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3. Flexible crystalline β-Ga2O3solar-blind photodetectors

4. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

5. State-of-the-art technologies of gallium oxide power devices

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