Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor

Published:2020-04-23 Issue:10 Volume:32 Page:4152-4165
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Mattelaer Felix¹^ORCID,Van Daele Michiel¹^ORCID,Minjauw Matthias M.¹^ORCID,Nisula Mikko¹^ORCID,Elliott Simon D.²^ORCID,Sajavaara Timo³,Dendooven Jolien¹^ORCID,Detavernier Christophe¹^ORCID

Affiliation:

1. Department of Solid State Sciences, Ghent University, Krijgslaan 281 S1, 9000 Gent, Belgium

2. Schrödinger Inc., 120 West 45th Street, 17th Floor, New York, New York 10036-4041, United States

3. Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, Finland

Funder

Fonds Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.9b04967

Reference70 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

3. Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C

4. Sputter-deposited network glasses

5. Li–B–O–N electrolytes for all-solid-state thin film batteries

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