Nucleation Enhancement and Area-Selective Atomic Layer Deposition of Ruthenium Using RuO4 and H2 Gas-Reference-Cited by-同舟云学术

Nucleation Enhancement and Area-Selective Atomic Layer Deposition of Ruthenium Using RuO4 and H2 Gas

Published:2019-02-20 Issue:5 Volume:31 Page:1491-1499
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Minjauw Matthias M.¹^ORCID,Rijckaert Hannes²^ORCID,Driessche Isabel Van²,Detavernier Christophe¹^ORCID,Dendooven Jolien¹^ORCID

Affiliation:

1. Conformal Coating of Nanostructures (CoCooN), Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Ghent, Belgium

2. Sol-Gel Centre for Research on Inorganic Powders and Thin Films Synthesis (SCRIPTS), Department of Chemistry, Ghent University, Krijgslaan 281 (S3), 9000 Ghent, Belgium

Funder

Bijzonder Onderzoeksfonds

Vlaamse Overheid

Fonds Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b03852

Reference62 articles.

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2. Wen, L. G.; Adelmann, C.; Pedreira, O. V.; Dutta, S.; Popovici, M.; Briggs, B.; Heylen, N.; Vanstreels, K.; Wilson, C. J.; Van Elshocht, S. In Ruthenium Metallization for Advanced Interconnects, 2016 IEEE International Interconnect Technology Conference/Advanced Metallization Conference IITC/AMC 2016, 2016; pp 34–36.

3. Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

4. Thickness dependence of the resistivity of platinum-group metal thin films

5. Pedreira, O. V.; Croes, K.; Lesniewska, A.; Wu, C.; Van Der Veen, M. H.; De Messemaeker, J.; Vandersmissen, K.; Jourdan, N.; Wen, L. G.; Adelmann, C. In Reliability Study on Cobalt and Ruthenium as Alternative Metals for Advanced Interconnects, IEEE International Reliability Physics Symposium, 2017; pp 6B2.1–6B2.8.

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