Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

Published:2016-09-21 Issue:39 Volume:8 Page:26119-26125
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wen Liang Gong¹,Roussel Philippe¹,Pedreira Olalla Varela¹,Briggs Basoene¹,Groven Benjamin¹,Dutta Shibesh¹²,Popovici Mihaela I.¹,Heylen Nancy¹,Ciofi Ivan¹,Vanstreels Kris¹,Østerberg Frederik W.³,Hansen Ole³,Petersen Dirch H.³,Opsomer Karl¹,Detavernie Christophe⁴,Wilson Christopher J.¹,Elshocht Sven Van¹,Croes Kristof¹,Bömmels Jürgen¹,Tőkei Zsolt¹,Adelmann Christoph¹

Affiliation:

1. imec, Kapeldreef 75, 3001 Leuven, Belgium

2. Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium

3. Department of Micro- and Nanotechnology, Technical University of Denmark, Ørsteds Plads, 2800 Kgs. Lyngby, Denmark

4. Department of Solid-State Sciences, Ghent University, Krijgslaan 281, 9000 Gent, Belgium

Funder

Villum Fonden

Imec

Innovationsfonden

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b07181

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4. Deposition Technologies of Materials for Cu-Interconnects

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