Nitroacetylacetone as a Cofuel for the Combustion Synthesis of High-Performance Indium–Gallium–Zinc Oxide Transistors
Author:
Affiliation:
1. Key Laboratory of Green Chemistry and Technology (Ministry of Education), College of Chemistry, Sichuan University, Chengdu 610064, P. R. China
2. Flexterra Inc., 8025 Lamon Avenue, Skokie, Illinois 60077, United States
Funder
China Scholarship Council
Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource
MRSEC program
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b00663
Reference38 articles.
1. Metal oxides for optoelectronic applications
2. 25th Anniversary Article: Key Points for High‐Mobility Organic Field‐Effect Transistors
3. Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors
4. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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