Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO2-Reference-Cited by-同舟云学术

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO2

Published:2018-01-30 Issue:3 Volume:30 Page:830-840
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Yoon Chang Mo,Oh Il-Kwon,Lee Yujin,Song Jeong-Gyu,Lee Su Jeong,Myoung Jae-Min^ORCID,Kim Hyun Gu¹²,Moon Hyoung-Seok³,Shong Bonggeun⁴,Lee Han-Bo-Ram¹²^ORCID,Kim Hyungjun^ORCID

Affiliation:

1. Department of Material Science Engineering, Incheon National University, Incheon 22012, Korea

2. Innovation Center for Chemical Engineering, Incheon National University, Incheon 22012, Korea

3. Energy Plant R&D Group, Korea Institute of Industrial Technology (KITECH), Busan 46938, Korea

4. Department of Chemical Engineering, Hongik University, Seoul 04066, Korea

Funder

Ministry of Trade, Industry and Energy

Busan Science and Technology Planning and Evaluation Agency

Korea Semiconductor Research Consortium

Busan Metropolitan City

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b04371

Reference48 articles.

1. Industrial Security Regulation, DoD 5220.22R;U.S. Department of Defense, 1985.

2. On the go with SONOS

3. Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

4. Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Encapsulation of Er-doped GeO2 nanofilms by Al2O3 atomic layers: Surficial sensitivity to trimethylaluminum and improvement on electroluminescence;Ceramics International;2024-04

2. Band alignment engineering at ultra-wide bandgap GeO2/SiO2 heterointerfaces;Results in Physics;2024-03

3. Electroluminescence from Er-doped GeO2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties;Applied Surface Science;2023-12

4. New Heteroleptic Germanium Precursors for GeO₂ Thin Films by Atomic Layer Deposition;ACS Omega;2023-11-09

5. Sn_1–xGe_xO_y and Zn_1–xGe_xO_y by Atomic Layer Deposition─Growth Dynamics, Film Properties, and Compositional Tuning for Charge Selective Transport in (Ag,Cu)(In,Ga)Se₂ Solar Cells;ACS Applied Energy Materials;2023-09-22