Role of Trimethylaluminum in Low Temperature Atomic Layer Deposition of Silicon Nitride-Reference-Cited by-同舟云学术

Role of Trimethylaluminum in Low Temperature Atomic Layer Deposition of Silicon Nitride

Published:2017-07-10 Issue:14 Volume:29 Page:6022-6029
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Dangerfield Aaron¹,Nanayakkara Charith E.¹,Mallikarjunan Anupama²,Lei Xinjian²,Pearlstein Ronald M.²,Derecskei-Kovacs Agnes³,Cure Jeremy⁴,Estève Alain⁴,Chabal Yves J.¹^ORCID

Affiliation:

1. Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

2. Versum Materials, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011, United States

3. Versum Materials, Inc., 7201 Hamilton Boulevard, Allentown, Pennsylvania 18195, United States

4. Laboratory for Analysis and Architecture of Systems (LAAS-CNRS), 31031 Toulouse, France

Funder

Division of Chemistry

Versum Materials Inc.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b01816

Reference29 articles.

1. High-temperature diffusion barriers from Si-rich silicon-nitride

2. Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

3. Tailor-Made Functionalization of Silicon Nitride Surfaces

4. Exploring High Refractive Index Silicon-Rich Nitride Films by Low-Temperature Inductively Coupled Plasma Chemical Vapor Deposition and Applications for Integrated Waveguides

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