Aluminum Oxide Thin Films from Aqueous Solutions: Insights from Solid-State NMR and Dielectric Response-Reference-Cited by-同舟云学术

Aluminum Oxide Thin Films from Aqueous Solutions: Insights from Solid-State NMR and Dielectric Response

Published:2018-10-08 Issue:21 Volume:30 Page:7456-7463
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Cui Jinlei¹^ORCID,Kast Matthew G.²^ORCID,Hammann Blake A.¹^ORCID,Afriyie Yvonne¹,Woods Keenan N.²,Plassmeyer Paul N.²,Perkins Cory K.³^ORCID,Ma Zayd L.¹,Keszler Douglas A.³^ORCID,Page Catherine J.²^ORCID,Boettcher Shannon W.²^ORCID,Hayes Sophia E.¹^ORCID

Affiliation:

1. Department of Chemistry and Institute for Materials Science & Engineering, Washington University, St. Louis, Missouri 63130, United States

2. Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States

3. Department of Chemistry, Oregon State University, Corvallis, Oregon 97331, United States

Funder

Division of Chemistry

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b05078

Reference61 articles.

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4. Wang, W.; Keszler, D. A. Process to Form Aqueous Precursor and Aluminum Oxide Film. U.S. Patent 9340678B2, 2016.

5. Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

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