Atomic Layer Deposition of SiCxNy Using Si2Cl6 and CH3NH2 Plasma
Author:
Affiliation:
1. Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, Colorado 80401, United States
2. Lam Research Corporation, 11155 SW Leveton Drive, Tualatin, Oregon 97062, United States
Funder
Lam Research Corporation
Lam Research Foundation
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b01358
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1. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects
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3. Comparison of characteristics and integration of copper diffusion-barrier dielectrics
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5. Challenges in spacer process development for leading-edge high-k metal gate technology
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