Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma-Reference-Cited by-同舟云学术

Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma

Author:

Guo Zheng¹,Li Hao²,Chen Qiang¹,Sang Lijun¹,Yang Lizhen¹,Liu Zhongwei¹,Wang Xinwei²

Affiliation:

1. Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China

2. School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, China

Funder

Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions

Shenzhen Science and Technology Innovation Committee

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

Reference32 articles.

1. International Technology Roadmap for Semiconductors.http://www.itrs.net/(accessed July 2015).

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