Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition-Reference-Cited by-同舟云学术

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Published:2021-04-22 Issue:9 Volume:33 Page:3266-3275
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Rouf Polla¹^ORCID,Samii Rouzbeh¹^ORCID,Rönnby Karl¹^ORCID,Bakhit Babak¹^ORCID,Buttera Sydney C.²,Martinovic Ivan¹,Ojamäe Lars¹^ORCID,Hsu Chih-Wei¹,Palisaitis Justinas¹,Kessler Vadim³,Pedersen Henrik¹^ORCID,O’Brien Nathan J.¹^ORCID

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, Linköping SE-58183, Sweden

2. Department of Chemistry, Carleton University, 1125 Colonel By Drive, Ottawa, Ontario K1S 5B6, Canada

3. Department of Molecular Sciences, Swedish University of Agricultural Sciences, P.O. Box 7015, Uppsala 75007, Sweden

Funder

Vetenskapsr?det

Knut och Alice Wallenbergs Stiftelse

Stiftelsen f?r?Strategisk Forskning

Sveriges Regering

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.1c00244

Reference48 articles.

1. Dielectric properties of reactively sputtered gallium nitride films

2. GaN, AlN, and InN: A review

3. First-principles calculations of effective-mass parameters of AlN and GaN

4. Growth and properties of single crystalline GaN substrates and homoepitaxial layers

5. SiC and GaN wide bandgap semiconductor materials and devices

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