Spontaneous Etching of Metal Fluorides Using Ligand-Exchange Reactions: Landscape Revealed by Mass Spectrometry
Author:
Affiliation:
1. Department of Chemistry, University of Colorado, Boulder, Colorado 80309, United States
2. Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538, United States
Funder
Lam Research Corporation
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.1c01950
Reference41 articles.
1. Mechanisms of Thermal Atomic Layer Etching
2. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride
3. Thermal atomic layer etching: A review
4. Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions
5. Thermal Atomic Layer Etching of Al2O3, HfO2, and ZrO2 Using Sequential Hydrogen Fluoride and Dimethylaluminum Chloride Exposures
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