Synthesis and Optical Properties of Amorphous Si3N4−xPx Dielectrics and Complementary Insights from ab Initio Structural Simulations
Author:
Affiliation:
1. Department of Chemistry and Biochemistry
2. Department of Physics, Arizona State University, Tempe, Arizona 85287
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm101448a
Reference25 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices
3. Rebib, F.; Tomasella, E.; Gaston, J. P.; Eypert, C.; Cellier, J. Jacquet, M.Journal of Physics; Conference Series 100; 2008; p082033.
4. Energy transfer and 1.54 μm emission in amorphous silicon nitride films
5. Silicon Nitride Films Deposited Using ECR-PECVD Technique for Coating InGaAlAs High Power Laser Facets
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices;IEEE Photonics Journal;2010-12
2. ChemInform Abstract: Synthesis and Optical Properties of Amorphous Si3N4-xPx Dielectrics and Complementary Insights from ab initio Structural Simulations.;ChemInform;2010-10-25
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