Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices-Reference-Cited by-同舟云学术

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Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices

Published:2010-12 Issue:6 Volume:2 Page:924-941
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Kouvetakis J,Mathews J,Roucka R,Chizmeshya Andrew V G,Tolle J,Menendez J

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/4563994/5584914/05585646.pdf?arnumber=5585646

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Results on MOVPE SiGeSn deposition for the monolithic integration of III-V and IV elements in multi-junction solar cells;Solar Energy Materials and Solar Cells;2021-06

2. Group IV photonics using (Si)GeSn technology toward mid-IR applications;Mid-infrared Optoelectronics;2020

3. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation;Journal of Applied Physics;2019-01-14

4. Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection;IEEE Photonics Journal;2018-12

5. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission;Applied Physics Letters;2018-06-18

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