Determination of optical properties of a-SiOxNy thin films by ellipsometric and UV-visible spectroscopies
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. Growth and characterization of SiON thin films by using thermal-CVD machine
3. Characterization of silicon oxynitride thin films deposited by electron beam physical vapor deposition technique
4. SiOxNy thin films deposited by reactive sputtering: Process study and structural characterisation
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