N-type polysilicon passivating contacts using ultra-thin PECVD silicon oxynitrides as the interfacial layer

Author:

Chen WenhaoORCID,Stuckelberger JosuaORCID,Wang Wenjie,Phang Sieu Pheng,Macdonald DanielORCID,Wan Yimao,Yan Di

Funder

Australian Renewable Energy Agency

National Key Research and Development Program of China

Australian Centre for Advanced Photovoltaics

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. The SIS tunnel emitter: a theory for emitters with thin interface layers;De Graaff;IEEE Trans. Electron. Dev.,1979

2. High-performance transistors with arsenic-implanted polysil emitters;Graul;IEEE J. Solid State Circ.,1976

3. SIPOS Heterojunction Contacts to Silicon, 1984 International Electron Devices Meeting, IEEE;Kwark,1984

4. Low J° contact structures using sipos and polysilicon films;Kwark;IEEE Photovolt. Specialists Conf.,1985

5. Polysilicon emitters for silicon concentrator solar cells;Gan,1990

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