Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD

Author:

Parkhomenko Irina1ORCID,Vlasukova Liudmila1,Komarov Fadei2,Kovalchuk Nataliya3,Demidovich Sergey3,Zhussupbekova Ainur45ORCID,Zhussupbekov Kuanysh4ORCID,Shvets Igor V.4,Milchanin Oleg2,Zhigulin Dmitry3,Romanov Ivan1

Affiliation:

1. Belarusian State University, Kurchatov Str. 5, 220045 Minsk, Belarus

2. A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University, Kurchatov Str. 7, 220045 Minsk, Belarus

3. Joint Stock Company “Integral”, Kazintsa Str. 121 A, 220108 Minsk, Belarus

4. School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin D02 PN40, Ireland

5. L.N. Gumilyov Eurasian National University, 2 Satpayev Street, Astana 010000, Kazakhstan

Funder

Irish Research Council

Ministry of Education and Science of the Republic of Kazakhstan

Republic of Belarus

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

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