Infrared Spectroscopy Study of Microstructures of Poly(silsesquioxane)s
Author:
Affiliation:
1. Department of Chemistry, Seoul National University, Seoul, 151-747, Korea, ELORET Corporation, NASA Ames Research Center, MS 229-1, Moffett Field, California 94305, and NASA Ames Research Center, MS 230-1, Moffett Field, California 94305
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm071575z
Reference33 articles.
1. Silsesquioxanes
2. In Search of Low- k Dielectrics
3. Preparation of low density poly(methylsilsesquioxane)s for LSI interlayer dielectrics with low dielectric constant. Fabrication of Ångstrom size pores prepared by baking trifluoropropylsilyl copolymers
4. Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation
5. ToF-SIMS studies of nanoporous PMSSQ materials: kinetics and reactions in the processing of low-K dielectrics for ULSI applications
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