Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates-Reference-Cited by-同舟云学术

Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

Published:2011-08-11 Issue:9 Volume:11 Page:3827-3832
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Uccelli Emanuele¹,Arbiol Jordi²,Magen Cesar³,Krogstrup Peter⁴,Russo-Averchi Eleonora¹,Heiss Martin¹,Mugny Gabriel¹,Morier-Genoud François⁵,Nygård Jesper⁴,Morante Joan Ramon⁶⁷,Fontcuberta i Morral Anna¹

Affiliation:

1. Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

2. Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, E-08193 Bellaterra, Catalonia, Spain

3. Instituto de Nanociencia de Aragon-ARAID and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza, Spain

4. Nano-Science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

5. Laboratoire d’Optoelectronique Quantique, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland

6. Catalonia Institute for Energy Research, IREC, 08930 Sant Adrià del Besòs, Spain

7. Department d’Electrònica, Universitat de Barcelona, 08028 Barcelona, Spain

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl201902w

Reference35 articles.

1. Epitaxial growth of InP nanowires on germanium

2. Epitaxial III−V Nanowires on Silicon

3. Nanolasers grown on silicon

4. Critical diameter for III-V nanowires grown on lattice-mismatched substrates

5. Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)

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