Direct Observation of the Conventional Epitaxial and Novel Heteroaxial ZB-WZ Stacking Faults-Reference-Cited by-同舟云学术

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Direct Observation of the Conventional Epitaxial and Novel Heteroaxial ZB-WZ Stacking Faults

Published:2023-06-29 Issue:8 Volume:23 Page:5384-5388
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ren Huan¹²^ORCID,Sun Yuanwei³,Gao Peng³,Ryan Kevin M.¹^ORCID

Affiliation:

1. Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland

2. Centre for BioImaging Sciences, National University of Singapore, 119077, Singapore

3. International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P.R. China

Funder

Science Foundation Ireland

Irish Research Council

European Regional Development Fund

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00110

Reference45 articles.

1. Occurrence of Polytypism in Compound Colloidal Metal Chalcogenide Nanocrystals, Opportunities, and Challenges

2. Zinc-blende–wurtzite polytypism in semiconductors

3. Atomic Scale Strain Relaxation in Axial Semiconductor III–V Nanowire Heterostructures

4. Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

5. Simple Criterion for Wurtzite-Zinc-Blende Polytypism in Semiconductors

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