Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate
Author:
Affiliation:
1. Department of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
2. Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 61186, Republic of Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.acs.org/doi/pdf/10.1021/acsomega.0c02411
Reference36 articles.
1. Ultrafast Carrier Capture and Auger Recombination in Single GaN/InGaN Multiple Quantum Well Nanowires
2. Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures
3. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations
4. Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides
5. InN, latest development and a review of the band-gap controversy
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