Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate-Reference-Cited by-同舟云学术

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

Published:2020-07-10 Issue:28 Volume:5 Page:17753-17760
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Johar Muhammad Ali¹²^ORCID,Waseem Aadil¹,Hassan Mostafa Afifi¹,Bagal Indrajit V.¹^ORCID,Abdullah Ameer¹,Ha Jun-Seok²,Lee June Key²,Ryu Sang-Wan¹²^ORCID

Affiliation:

1. Department of Physics, Chonnam National University, Gwangju 61186, Republic of Korea

2. Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 61186, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.0c02411

Reference36 articles.

1. Ultrafast Carrier Capture and Auger Recombination in Single GaN/InGaN Multiple Quantum Well Nanowires

2. Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

3. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

4. Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides

5. InN, latest development and a review of the band-gap controversy

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