Growth and Characterization of Ternary HfxTayOz Films via Nitrogen-Infused Wet Oxidation
Author:
Affiliation:
1. Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Gelugor, Penang, Malaysia
Funder
Kementerian Pendidikan Malaysia
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.acs.org/doi/pdf/10.1021/acsomega.0c02120
Reference48 articles.
1. Effects of annealing time on the electrical properties of the Y2O3gate on silicon
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3. Physical and electrical characteristics of metal-organic decomposed CeO2 gate spin-coated on 4H-SiC
4. Study of molar ratio on the characteristics of metal–organic decomposed LaxCe1−xOz film as a metal reactive oxide on Si substrate
5. Chemical deposition of Al2O3 thin films on Si substrates
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1. Growth of metal‐organic decomposed ternary Ga x Ce y O z films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-11-28
2. Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application;International Journal of Energy Research;2021-11-14
3. Annealing effects on the optical and electrochemical properties of tantalum pentoxide films;Journal of Advanced Ceramics;2021-03-21
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