Effects of post-deposition annealing time in oxygen ambient on Y2O3 film deposited on silicon substrate-Reference-Cited by-同舟云学术

Effects of post-deposition annealing time in oxygen ambient on Y2O3 film deposited on silicon substrate

Published:2014-12-05 Issue:sup6 Volume:18 Page:S6-495-S6-498
ISSN:1432-8917
Container-title:Materials Research Innovations
language:en
Short-container-title:Materials Research Innovations

Author:

Quah H. J.¹,Cheong K. Y.¹

Affiliation:

1. Electronic Materials Research GroupSchool of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang, Malaysia

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1179/1432891714Z.0000000001032

Reference25 articles.

1. High dielectric constant oxides

2. Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

3. Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si

4. Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure

5. Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of varying wet oxidation temperature in the presence of nitrogen flow on hafnium tantalum oxide films;Ceramics International;2023-12

2. Metal-organic decomposed cerium oxide thin film in mixed ambient at different temperatures for MOS capacitor;Sustainable Materials and Technologies;2023-04

3. Growth of metal‐organic decomposed ternary Ga x Ce y O z films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-11-28

4. Formation of cerium oxide film via post-sputter oxidation of cerium in nitrogen/oxygen/nitrogen ambient;Journal of Alloys and Compounds;2021-01

5. Growth and Characterization of Ternary HfxTayOz Films via Nitrogen-Infused Wet Oxidation;ACS Omega;2020-10-09