Effects of annealing time on the electrical properties of the Y2O3gate on silicon
Author:
Publisher
Informa UK Limited
Subject
General Materials Science,Biomedical Engineering,Bioengineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/17458080.2013.781689
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1. High dielectric constant oxides
2. Alternative Gate Dielectrics for Microelectronics
3. Structural and Electrical Characterizations of Yttrium Oxide Films after Postannealing Treatments
4. Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si
5. Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
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