Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation
Author:
Affiliation:
1. The Institute of Technological Sciences, Wuhan University, Wuhan 430072, Hubei, China
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c06154
Reference26 articles.
1. Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy
2. Growth of bulk GaN crystals
3. Hydride vapor phase epitaxy for gallium nitride substrate
4. Mori, Y.; Imade, M.; Maruyama, M.; Yoshimura, M.; Yamane, H.; Kawamura, F.; Kawamura, T. Handbook of Crystal Growth Second ed.: Bulk Crystal Growth: Basic Techniques, and Growth Mechanisms and Dynamics; Rudolph, P., Ed. Elsevier, 2015; pp 505–533.
5. Mikawa, Y.; Ishinabe, T.; Kawabata, S.; Mochizuki, T.; Kojima, A.; Kagamitani, Y.; Fujisawa, H. Ammonothermal Growth of Polar and Non-polar Bulk GaN Crystal. In Proceedings of the Conference on Gallium Nitride Materials and Devices X, San Francisco, CA, February 9–12, 2015.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices;Crystals;2023-06-23
2. Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model;Materials;2022-06-10
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