Growth of Bulk Nitrides from a Na Flux
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Publisher
Elsevier
Reference47 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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1. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate;Journal of Crystal Growth;2024-02
2. Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation;ACS Omega;2022-03-10
3. Experimental Synthesis of Theoretically Predicted Multivalent Ternary Nitride Materials;Chemistry of Materials;2022-02-01
4. Growth of bulk GaN crystals;Journal of Applied Physics;2020-08-07
5. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03
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