Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites

Author:

Thien Gregory Soon How1,Ab Rahman Marlinda2,Yap Boon Kar345,Tan Nadia Mei Lin67,He Zhicai8ORCID,Low Pei-Ling1,Devaraj Nisha Kumari1,Ahmad Osman Ahmad Farimin1,Sin Yew-Keong1,Chan Kah-Yoong1

Affiliation:

1. Centre for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor, Malaysia

2. Nanotechnology and Catalysis Research Centre (NANOCAT), Universiti Malaya, 50603 Kuala Lumpur, Malaysia

3. Electronic and Communications Department, College of Engineering, Universiti Tenaga Nasional, 43000 Kajang, Selangor Malaysia

4. Institute of Sustainable Energy, Universiti Tenaga Nasional, 43000 Kajang, Selangor, Malaysia

5. International School of Advanced Materials, South China University of Technology, 381 Wushan Road, Tianhe District, 510640 Guangzhou, Guangdong People’s Republic of China

6. Key Laboratory of More Electric Aircraft Technology of Zhejiang Province, University of Nottingham Ningbo China, 315100 Ningbo, People’s Republic of China

7. Institute of Power Engineering, Universiti Tenaga Nasional, 43000 Kajang, Selangor, Malaysia

8. Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science & Engineering, South China University of Technology, 381 Wushan Road, Tianhe District, 510640Guangzhou, Guangdong Province People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

Universiti Tenaga Nasional

Multimedia University

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

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