Data Storage: Air-Stable Cesium Lead Iodide Perovskite for Ultra-Low Operating Voltage Resistive Switching (Adv. Funct. Mater. 5/2018)-Reference-Cited by-同舟云学术

Data Storage: Air-Stable Cesium Lead Iodide Perovskite for Ultra-Low Operating Voltage Resistive Switching (Adv. Funct. Mater. 5/2018)

Published:2018-01 Issue:5 Volume:28 Page:1870029
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Han Ji Su¹,Le Quyet Van²,Choi Jaeho¹,Hong Kootak¹,Moon Cheon Woo¹,Kim Taemin Ludvic¹,Kim Hyojung¹,Kim Soo Young²,Jang Ho Won¹

Affiliation:

1. Department of Materials Science and Engineering; Research Institute of Advanced Materials; Seoul National University; Seoul 08826 Republic of Korea

2. School of Chemical Engineering and Materials Science; Chung-Ang University; Seoul 06974 Republic of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron‐Sponge Nature of Polyoxometalates for Next‐Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices;Advanced Science;2023-11-29

2. Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites;ACS Omega;2022-10-27

3. A time‐dependent density functional study on optical response in all‐inorganic lead‐halide perovskite nanostructures;International Journal of Quantum Chemistry;2020-04-13

4. Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr 3 Film‐Based Memory Device;Advanced Electronic Materials;2019-12-17