Evaluation of Field-Effect Mobility and Contact Resistance of Transistors That Use Solution-Processed Single-Walled Carbon Nanotubes
Author:
Affiliation:
1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn302185d
Reference48 articles.
1. Progress in Carbon Nanotube Electronics and Photonics
2. Carbon Nanotubes for High-Performance Electronics—Progress and Prospect
3. Nanotube electronics for radiofrequency applications
4. Ballistic carbon nanotube field-effect transistors
5. Sub-10 nm Carbon Nanotube Transistor
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