High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium–Indium–Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel-Reference-Cited by-同舟云学术

High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium–Indium–Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel

Published:2013-11-20 Issue:23 Volume:5 Page:12262-12267
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Jae Chul¹,Ahn Seung-Eon²,Lee Ho-Nyeon³

Affiliation:

1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

2. Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Yongin-si 446-712, Korea

3. Department of Display and Electronic Information Engineering, Soonchunhyang University, Asan 336-745, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am404490t

Reference42 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

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