Extremely High- and Low-Density of Ga Droplets on GaAs{111}A,B: Surface-Polarity Dependence
Author:
Affiliation:
1. National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
2. Graduate School of Engineering, Kyushu University, NIMS, Tsukuba 305-0044, Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg501545n
Reference17 articles.
1. New MBE growth method for InSb quantum well boxes
2. High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy
3. Extremely high-density GaAs quantum dots grown by droplet epitaxy
4. Regimes of GaAs quantum dot self-assembly by droplet epitaxy
5. Two-Step Formation of Gallium Droplets with High Controllability of Size and Density
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Local droplet etching of a vicinal InGaAs(111)A metamorphic layer;Applied Surface Science;2024-10
2. Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations;The Journal of Physical Chemistry C;2024-03-13
3. Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers;Japanese Journal of Applied Physics;2024-02-08
4. Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots;physica status solidi (a);2024-01-10
5. Fabrication of Lattice-Mismatched MoTe2/MoSe2 Heterostructures using Molecular-Beam Epitaxy;Crystal Growth & Design;2023-06-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3