Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations-Reference-Cited by-同舟云学术

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Published:2024-03-13 Issue:12 Volume:128 Page:5168-5178
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tsamo Guy¹,Nastovjak Alla G.²³^ORCID,Shwartz Nataliya L.²³,Hoggan Philip E.¹^ORCID,Robert-Goumet Christine¹,Pimpinelli Alberto¹^ORCID,Petit Matthieu⁴^ORCID,Ranguis Alain⁴,Gardes Emmanuel⁵,Sall Mamour⁶,Bideux Luc¹,Monier Guillaume¹^ORCID

Affiliation:

1. Université Clermont Auvergne, Clermont Auvergne INP, CNRS, Institut Pascal UMR 6602, Clermont-Ferrand F-63000, France

2. A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia

3. Novosibirsk State Technical University, 20 K. Marx str., Novosibirsk 630073, Russia

4. Aix Marseille Université, CNRS, CINaM UMR 7325, Marseille 13288, France

5. Laboratoire Magmas et Volcans, Université Clermont Auvergne, CNRS, IRD, OPGC, Clermont-Ferrand F-63000, France

6. CIMAP Normandie Univ, CEA, CNRS, ENSICAEN, UNICAEN, Caen 14000, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c07945

Reference41 articles.

1. Surface chemical potential in multilayered Stranski–Krastanow systems: An analytic study and anticipated applications

2. New MBE growth method for InSb quantum well boxes

3. Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy

4. Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

5. Semiconductor quantum dots

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