Non-Lithographic Growth of Core–Shell GaAs Nanowires on Si for Optoelectronic Applications-Reference-Cited by-同舟云学术

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Non-Lithographic Growth of Core–Shell GaAs Nanowires on Si for Optoelectronic Applications

Published:2014-03-05 Issue:4 Volume:14 Page:1510-1515
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bae Myung-Ho¹,Kim Bum-Kyu¹²,Ha Dong-Han¹,Lee Sang Jun¹,Sharma Rahul³,Choi Kyoung Jin³,Kim Ju-Jin²,Choi Won Jun⁴,Shin Jae Cheol⁵

Affiliation:

1. Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea

2. Department of Physics, Chonbuk National University, Jeonju 561-756, Republic of Korea

3. School of Materials Science and Engineering, Ulsan National Institute of Science & Technology, Ulsan 689-805, Republic of Korea

4. Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea

5. Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg401520q

Reference33 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. Nanowire photonics

3. Nanolasers grown on silicon

4. A III–V nanowire channel on silicon for high-performance vertical transistors

5. Epitaxial III−V Nanowires on Silicon

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1. Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core–shell nanowires monitored by in situ x-ray diffraction;Nanotechnology;2024-05-01

2. Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer;Energies;2022-02-28

3. Low growth rate synthesis of GaAs nanowires with uniform size;Nano Express;2021-04-30

4. Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy;Materials Science in Semiconductor Processing;2020-06

5. Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires;Scientific Reports;2020-05-19

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