Desorption of Arsenic Species during the Surfactant Enhanced Growth of Ge on Si(100)
Author:
Affiliation:
1. JILA, National Institute of Standards and Technology and University of Colorado, and Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0440
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp012411n
Reference33 articles.
1. Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
2. Surfactant‐mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te
3. Surfactants in epitaxial growth
4. Local dimer exchange in surfactant-mediated epitaxial growth
5. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
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