ALD Growth of MgxCa1–xO on GaN and Its Band Offset Analysis
Author:
Affiliation:
1. John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
2. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
Funder
Division of Chemistry
Charles Stark Draper Laboratory
Office of Naval Research
Office of Science
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00977
Reference34 articles.
1. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices
2. Measurement of Energy Band Structure of MgO, MgSrO and MgCaO Thin Film by their Secondary Electron Emission Coefficient due to Auger Neutralization
3. Application of MgCaO Cathode Layer to Plasma Display Panel for High Luminous Efficacy
4. Zukawa, T.; Yoshino, K.; Oe, Y.; Kawarazaki, H.; Aoto, K.; Tanaka, Y.; Murai, R. 13.5 L: Late-News Paper: Development of MgCaO Protective Layer of Plasma Display Panels for Decreased Discharge Voltage. SID Symposium Digest of Technical Papers; Wiley Online Library, 2012; pp 165–167.
5. Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application
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