Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices-Reference-Cited by-同舟云学术

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Published:2012-07-24 Issue:7 Volume:5 Page:1297-1335
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Long Rathnait D.,McIntyre Paul C.

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/5/7/1297/pdf

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4. BRIDGELUXhttp://bridgelux.com/media-center/press-releases/bridgelux-demonstrates-dramatic-advancements-in-gan-on-silicon-technology-for-solid-state-lighting/

5. Lidow Returns with “Disruptive” GaN Startuphttp://www.eetimes.com/electronics-news/4088019/Lidow-returns-with-disruptive-GaN-startup

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