Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse-Reference-Cited by-同舟云学术

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

Published:2023-08-14 Issue:8 Volume:5 Page:4549-4555
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Jo Yooyeon¹,Lee Ji Young²,Park Eunpyo¹,Kim Hyun-Soo²,Choi Hyung-Jin²,Mun Seunguk³,Kim Yunseok³⁴^ORCID,Hur Sunghoon²,Yoon Jung Ho²^ORCID,Jang Ji-Soo²^ORCID,Kang Chong-Yun²⁵^ORCID,Baek Seung Hyub²⁶,Baik Jeong Min²³⁴,Kwak Joon Young¹⁶^ORCID,Song Hyun-Cheol²³⁴^ORCID

Affiliation:

1. Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

3. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

4. KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

5. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea

6. Division of Nanoscience and Technology, Korea University of Science and Technology (UST), Daejeon 34113, Republic of Korea

Funder

National Research Foundation of Korea

Institute for Information and Communications Technology Promotion

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00691

Reference30 articles.

1. 2D Material Based Synaptic Devices for Neuromorphic Computing

2. Artificial Neural Networks Based on Memristive Devices: From Device to System

3. Emerging Artificial Synaptic Devices for Neuromorphic Computing

4. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

5. Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing

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