High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture-Reference-Cited by-同舟云学术

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Published:2019-12-13 Issue:1 Volume:2 Page:111-119
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Liao Fuyou,Guo Zhongxun,Wang Yin,Xie Yufeng,Zhang Simeng,Sheng Yaochen,Tang Hongwei,Xu Zihan¹,Riaud Antoine,Zhou Peng^ORCID,Wan Jing,Fuhrer Michael S.^ORCID,Jiang Xiangwei²,Zhang David Wei,Chai Yang³^ORCID,Bao Wenzhong^ORCID

Affiliation:

1. Six Carbon Tech. Shenzhen, Shenzhen 518106, China

2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China

Funder

Ministry of Science and Technology of the People's Republic of China

Australian Research Council

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00628

Reference41 articles.

1. Electronics based on two-dimensional materials

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

5. Single-layer MoS2 transistors

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