Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films-Reference-Cited by-同舟云学术

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films

Published:2021-06-21 Issue:7 Volume:3 Page:3247-3255
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Hyun Jae¹,Moon Taehwan¹,Kang Sukin¹,Kim Woohyun¹^ORCID,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00410

Reference35 articles.

1. Large positive linear magnetoresistance in the two-dimensional t 2g electron gas at the EuO/SrTiO3 interface

2. Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces

3. Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface

4. Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

5. Hybrid organic–metal oxide multilayer channel transistors with high operational stability

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